+5 V
100 ?
R PF = 4.7 ?
SPM
IN (UH) , IN (VH) , IN (WH)
MCU
100 ?
100 ?
IN (UL) , IN (VL) , IN (WL)
V FO
1 nF
C PF = 1 nF
1 nF
1 nF
COM
Figure 11. Recommended MCU I/O Interface Circuit
3rd Notes:
1. RC coupling at each input might change depending on the PWM control scheme in the application and the wiring impedance of the application’s printed circuit board. The input
signal section of the Motion SPM ? 3 product integrates a 5 k ?? ( typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal
voltage drop at input terminal.
2. The logic input works with standard CMOS or LSTTL outputs.
These values depend on PWM control algorithm.
One-Leg Diagram of
Motion SPM 3 Product
P
15 V
22 μ F
0.1 μ F
Vcc VB
IN HO
COM VS
Inverter
Vcc
Output
1000 μ F
1 μ F
IN
OUT
COM V SL
N
Figure 12. Recommended Bootstrap Operation Circuit and Parameters
3rd Notes:
3. The ceramic capacitor placed between V CC - COM should be over 1 ? F and mounted as close to the pins of the Motion SPM 3 product as possible.
?2008 Fairchild Semiconductor Corporation
FSBB20CH60CL Rev. C3
12
www.fairchildsemi.com
相关PDF资料
FSBB20CH60CT MODULE ADV MOTION SPM SPM27-CC
FSBB20CH60C MODULE MOTION-SPM 600V SPM27-CC
FSBB20CH60SL MODULE SPM 600V 20A SPM27-CA
FSBB30CH60F IC SMART PWR MODULE SPM27-EA
FSBF10CH60BTL MODULE SPM 600V 10A 3PH SPM27-JB
FSBF10CH60BT MODULE SPM 600V 10A 3PH SPM27-JA
FSBF10CH60B MODULE SPM 600V 10A 3PH SPM27-JA
FSBF15CH60BTH MODULE SPM MOTION CTRL SPM27-JC
相关代理商/技术参数
FSBB20CH60CT 功能描述:IGBT 模块 600V 20A SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60CTSL 制造商:Fairchild Semiconductor Corporation 功能描述:
FSBB20CH60F 功能描述:IGBT 模块 HIGH VOLTAGE RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60F 制造商:Fairchild Semiconductor Corporation 功能描述:SMART POWER MODULE ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:SMART POWER MODULE, 3-PH, 600V, 20A PCB MOUNT
FSBB20CH60L 功能描述:IGBT 模块 Smart Power Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60SL 功能描述:IGBT 模块 600V/20A Smart Power RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB3 制造商:MMD 制造商全称:MMD Components 功能描述:HC-49/US Surface Mounted Crystal
FSBB30CH60 功能描述:马达/运动/点火控制器和驱动器 600V 30A SMART RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube